K. Watson

Current status and future trends of SiGe BiCMOS technology

D.L. Harame, D. Ahlgren, Douglas Coolbaugh et al. · IEEE Transactions on Electron Devices · 2001 · 168 citations

Engineering, Computer Engineering, Electrical Engineering +17

A 0.18 μm BiCMOS technology featuring 120/100 GHz (f/sub T//f/sub max/) HBT and ASIC-compatible CMOS using copper interconnect

Alvin Joseph, D. Coolbaugh, M. Zierak et al. · 2002 · 129 citations

Engineering, Electrical Engineering, Microelectronics +16

The combined effects of deuterium anneals and deuterated barrier-nitride processing on hot-electron degradation in MOSFET's

T.G. Ference, Jay Burnham, William F. Clark et al. · IEEE Transactions on Electron Devices · 1999 · 42 citations

Engineering, Electrical Engineering, Materials Science +17

Reliability of high-speed SiGe heterojunction bipolar transistors under very high forward current density

Jae-Sung Rieh, K. Watson, F Guarin et al. · IEEE Transactions on Device and Materials Reliability · 2003 · 39 citations

Engineering, Electrical Engineering, Materials Science +17

Advanced passive devices for enhanced integrated RF circuit performance

D. Coolbaugh, E. Eshun, R. Groves et al. · 2003 · 39 citations

Engineering, Electrical Engineering, Microelectronics +16