S. G. Malhotra - Concepedia

Author

S. G. Malhotra

IBM (United States)

Also Known As

S. G. MALHOTRA, S. G. Malhotra, S. Malhotra, S.G Malhotra, S.G. Malhotra, Sandra G. Malhotra, Sandra Malhotra

Publications

563

Citations

H-Index

Concepts

All Affiliations

IBM (United States)IBM Research - Thomas J. Watson Research Center University of Michigan Advanced Micro Devices (United States)Stanford Synchrotron Radiation Lightsource

About

S. G. Malhotra is an author at IBM (United States) specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	11	530
2	Applied Physics	10	10	465
3	Electrical Engineering	7	7	306
4	Materials Engineering	4	4	86
5	Computer Engineering	2	2	41

S. G. Malhotra

Publications

530

Citations

H-Index

Page 1

	Year	Citations
Mechanisms for very long electromigration lifetime in dual-damascene Cu interconnections C-K. Hu, L. Gignac, S. G. Malhotra, Applied Physics Letters EngineeringCharge TransportInterconnect (Integrated Circuits)Advanced Packaging (Semiconductors)Nanoelectronics	2001	96
Picosecond ultrasonics study of the vibrational modes of a nanostructure G. A. Antonelli, Humphrey J. Maris, S. G. Malhotra, Journal of Applied Physics Time-delayed Probe LightOptical MaterialsGlass MatrixEngineeringOptomechanical System	2002	96
A high performance liner for copper damascene interconnects D. Edelstein, Cyprian Uzoh, C. Cabral, Materials Science3D Ic ArchitectureElectrical EngineeringWafer Scale ProcessingEngineering	2001	90
Analysis of thin film stress measurement techniques S. G. Malhotra, Z. U. Rek, S. M. Yalisove, Thin Solid Films EngineeringStressstrain AnalysisSolid MechanicsResidual StressElectronic Packaging	1997	65
Electromigration Cu mass flow in Cu interconnections C.‐K. Hu, D. Canaperi, S.T. Chen, Thin Solid Films Electrical EngineeringElectromigration TechniqueEngineeringApplied PhysicsMetallurgical Interaction	2005	34
Depth dependence of residual strains in polycrystalline Mo thin films using high-resolution x-ray diffraction S. G. Malhotra, Z. U. Rek, S. M. Yalisove, Journal of Applied Physics EngineeringPenetration DepthStressstrain AnalysisResidual StrainsEpitaxial Growth	1996	33
Strain gradients and normal stresses in textured Mo thin films S. G. Malhotra, Z. U. Rek, S. M. Yalisove, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films EngineeringStrain GradientsThin Film Process TechnologyX-ray ImagingNormal Strain	1997	30
A high performance 0.13 μm copper BEOL technology with low-k dielectric R. Goldblatt, B. Agarwala, M.B. Anand, Materials ScienceMaterials EngineeringElectrical EngineeringCopper WiringMetal Pitches	2002	30
Comprehensive reliability evaluation of a 90 nm CMOS technology with Cu/PECVD low-k BEOL D. Edelstein, H. Rathore, C. Davis, EngineeringChip-package Reliability StressInterconnect (Integrated Circuits)Comprehensive Reliability EvaluationCu/pecvd Low-k Beol	2004	23
Reliability, yield, and performance of a 90 nm SOI/Cu/SiCOH technology D. Edelstein, C. Davis, L. A. Clevenger, EngineeringVlsi DesignChip-package ReliabilityComprehensive CharacterizationInterconnect (Integrated Circuits)	2004	18

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