Frank Tsai

A 120mm2 16Gb 4-MLC NAND Flash Memory with 43nm CMOS Technology

Dai NAKAMURA, K. Kanda, Masaru Koyanagi et al. · IEICE Technical Report; IEICE Tech. Rep. · 2008 · 48 citations

Engineering, Flash Memory, Computer Engineering +5

128Gb 3b/cell NAND flash memory in 19nm technology with 18MB/s write rate and 400Mb/s toggle mode

Yan Li, Seungpil Lee, Ken Oowada et al. · 2012 · 46 citations

Non-volatile Memory, Electrical Engineering, Toggle Mode +15

Electron optical column for a multicolumn, multibeam direct-write electron beam lithography system

Enhuai Yin, Alan D. Brodie, Frank Tsai et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2000 · 41 citations

Engineering, Electron-beam Lithography, Microscopy +20

Use of microfabricated cold field emitters in sub-100 nm maskless lithography

Guangran Guo, K. Tokunaga, Enhuai Yin et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2001 · 18 citations

Materials Science, Electrical Engineering, Engineering +15

32nm overlay improvement capabilities

Brad Eichelberger, Kelly O'Brien, David Tien et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2008 · 11 citations

Engineering, Electron-beam Lithography, Overlay Improvement Capabilities +19