Ken Oowada

A 56-nm CMOS 99-${\hbox {mm}}^{2} $ 8-Gb Multi-Level NAND Flash Memory With 10-MB/s Program Throughput

Ken Takeuchi, Yasushi Kameda, Susumu Fujimura et al. · IEEE Journal of Solid-State Circuits · 2007 · 70 citations

Non-volatile Memory, Engineering, Vlsi Design +16

A 16 Gb 3-Bit Per Cell (X3) NAND Flash Memory on 56 nm Technology With 8 MB/s Write Rate

Yan Li, Seungpil Lee, Yupin Fong et al. · IEEE Journal of Solid-State Circuits · 2009 · 53 citations

Nm Technology, Electrical Engineering, Non-volatile Memory +12

128Gb 3b/cell NAND flash memory in 19nm technology with 18MB/s write rate and 400Mb/s toggle mode

Yan Li, Seungpil Lee, Ken Oowada et al. · 2012 · 46 citations

Non-volatile Memory, Electrical Engineering, Toggle Mode +15

A 16Gb 3b/ Cell NAND Flash Memory in 56nm with 8MB/s Write Rate

Yan Li, Seungpil Lee, Yupin Fong et al. · 2008 · 46 citations · Full text

D2 Chips, Electrical Engineering, Non-volatile Memory +13

A 56nm CMOS 99mm2 8Gb Multi-level NAND Flash Memory with 10MB/s Program Throughput

Ken Takeuchi, Y. Kameda, Shinji Fujimura et al. · 2006 · 37 citations

Non-volatile Memory, Electrical Engineering, Efficient Use +15