K. Kanda

A 512Gb 3b/Cell 3D flash memory on a 96-word-line-layer technology

Maejima Hiroshi, K. Kanda, Susumu Fujimura et al. · 2018 · 75 citations

Non-volatile Memory, Electrical Engineering, Memory Architecture +15

A 1.33-Tb 4-Bit/Cell 3-D Flash Memory on a 96-Word-Line-Layer Technology

Noboru Shibata, K. Kanda, Takahiro Shimizu et al. · IEEE Journal of Solid-State Circuits · 2019 · 51 citations

Engineering, Emerging Memory Technology, Computer Architecture +18

13.1 A 1.33Tb 4-bit/Cell 3D-Flash Memory on a 96-Word-Line-Layer Technology

Noboru Shibata, K. Kanda, Tatsuo Shimizu et al. · 2019 · 49 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +16

A 120mm2 16Gb 4-MLC NAND Flash Memory with 43nm CMOS Technology

Dai NAKAMURA, K. Kanda, Masaru Koyanagi et al. · IEICE Technical Report; IEICE Tech. Rep. · 2008 · 48 citations

Engineering, Flash Memory, Computer Engineering +5

A 130-mm/sup 2/, 256-Mbit NAND flash with shallow trench isolation technology

K. Imamiya, Y. Sugiura, Hiroshi Nakamura et al. · IEEE Journal of Solid-State Circuits · 1999 · 30 citations

Non-volatile Memory, Electrical Engineering, Engineering +12