Maejima Hiroshi

A 512Gb 3b/Cell 3D flash memory on a 96-word-line-layer technology

Maejima Hiroshi, K. Kanda, Susumu Fujimura et al. · 2018 · 75 citations

Non-volatile Memory, Electrical Engineering, Memory Architecture +15

A 70nm 16Gb 16-level-cell NAND Flash Memory

Noboru Shibata, Maejima Hiroshi, K. Isobe et al. · 2007 · 60 citations

Hardware Security, Non-volatile Memory, Electrical Engineering +11

A 16 Gb 3-Bit Per Cell (X3) NAND Flash Memory on 56 nm Technology With 8 MB/s Write Rate

Yan Li, Seungpil Lee, Yupin Fong et al. · IEEE Journal of Solid-State Circuits · 2009 · 53 citations

Nm Technology, Electrical Engineering, Non-volatile Memory +12

A 16Gb 3b/ Cell NAND Flash Memory in 56nm with 8MB/s Write Rate

Yan Li, Seungpil Lee, Yupin Fong et al. · 2008 · 46 citations · Full text

D2 Chips, Electrical Engineering, Non-volatile Memory +13

30.4 A 1Tb 3b/Cell 3D-Flash Memory in a 170+ Word-Line-Layer Technology

Higuchi Tsutomu, Takuyo Kodama, Koji Kato et al. · 2021 · 28 citations

Engineering, Emerging Memory Technology, Computer Architecture +17