Concepedia

Maejima Hiroshi

MH

Statistics

Publications

6

Citations

280

H-Index

6

Active since

2005

Affiliations

Toshiba (Japan)(Current)

Maejima Hiroshi is an author at Toshiba (Japan) specializing in memory subsystem design, engineering, and computer engineering.

Publications per year

2005–2021

6

Publications

6

A 512Gb 3b/Cell 3D flash memory on a 96-word-line-layer technology

Maejima Hiroshi, K. Kanda, Susumu Fujimura et al. · 2018 · 78 citations

Engineering, Computer Engineering, Computer Science +13

A 70nm 16Gb 16-level-cell NAND Flash Memory

Noboru Shibata, Maejima Hiroshi, K. Isobe et al. · 2007 · 62 citations

Engineering, Computer Engineering, Computer Science +12

A 16 Gb 3-Bit Per Cell (X3) NAND Flash Memory on 56 nm Technology With 8 MB/s Write Rate

Yan Li, Seungpil Lee, Yupin Fong et al. · IEEE Journal of Solid-State Circuits · 2009 · 53 citations

Engineering, Computer Engineering, Electrical Engineering +15

A 16Gb 3b/ Cell NAND Flash Memory in 56nm with 8MB/s Write Rate

Yan Li, Seungpil Lee, Yupin Fong et al. · 2008 · 47 citations · Full text

Engineering, Computer Engineering, Computer Science +15

30.4 A 1Tb 3b/Cell 3D-Flash Memory in a 170+ Word-Line-Layer Technology

Higuchi Tsutomu, Takuyo Kodama, Koji Kato et al. · 2021 · 30 citations

Engineering, Computer Engineering, Computer Science +13

1–5 of 6