2007 · 62 citations · 3 references
EngineeringComputer EngineeringComputer ScienceMemorySemiconductor DevicesMemory DevicesMemory Subsystem DesignFlash MemoryFlash Memory DevicesMemory Cell DesignMemory Circuit DesignNand Flash MemoryNand Flash Memory OrganizationNon-volatile Memory DesignThroughput
A 16 Gb 16-level-cell (16LC) NAND flash memory using 70 nm design rule has been developed. This 16LC NAND flash memory can store 4 bits in a cell which enabled double bit density comparing to 4-level-cell (4LC) NAND flash with the same design rule. New programming method achieves 0.62 MB/s programming throughput.
3
A 146mm/sup 2/ 8Gb nand flash memory with 70nm CMOS technology
T. Hara, Koichi Fukuda, K. Kanazawa et al. · 2005 · 21 citations
Engineering, Computer Engineering, Electrical Engineering +17