Takahiro Shimizu

A 512Gb 3b/Cell 3D flash memory on a 96-word-line-layer technology

Maejima Hiroshi, K. Kanda, Susumu Fujimura et al. · 2018 · 75 citations

Non-volatile Memory, Electrical Engineering, Memory Architecture +15

A 70nm 16Gb 16-level-cell NAND Flash Memory

Noboru Shibata, Maejima Hiroshi, K. Isobe et al. · 2007 · 60 citations

Hardware Security, Non-volatile Memory, Electrical Engineering +11

A 1.33-Tb 4-Bit/Cell 3-D Flash Memory on a 96-Word-Line-Layer Technology

Noboru Shibata, K. Kanda, Takahiro Shimizu et al. · IEEE Journal of Solid-State Circuits · 2019 · 51 citations

Engineering, Emerging Memory Technology, Computer Architecture +18

A 1-Tb 4b/Cell 4-Plane 162-Layer 3D Flash Memory With a 2.4-Gb/s I/O Speed Interface

J. Yuh, Jason Li, Heguang Li et al. · 2022 IEEE International Solid- State Circuits Conference (ISSCC) · 2022 · 25 citations

Non-volatile Memory, Electrical Engineering, Engineering +14

A 19 nm 112.8 mm$^{2}$ 64 Gb Multi-Level Flash Memory With 400 Mbit/sec/pin 1.8 V Toggle Mode Interface

K. Kanda, Noboru Shibata, Toshiki Hisada et al. · IEEE Journal of Solid-State Circuits · 2012 · 24 citations

Non-volatile Memory, Electrical Engineering, Memory Architecture +14