Toshiki Hisada

13.5 A 512Gb 3-bit/Cell 3D Flash Memory on 128-Wordline-Layer with 132MB/s Write Performance Featuring Circuit-Under-Array Technology

Chang Siau, Kwang Ho Kim, Seungpil Lee et al. · 2019 · 83 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +17

A 512Gb 3b/Cell 3D flash memory on a 96-word-line-layer technology

Maejima Hiroshi, K. Kanda, Susumu Fujimura et al. · 2018 · 75 citations

Non-volatile Memory, Electrical Engineering, Memory Architecture +15

A 1.33-Tb 4-Bit/Cell 3-D Flash Memory on a 96-Word-Line-Layer Technology

Noboru Shibata, K. Kanda, Takahiro Shimizu et al. · IEEE Journal of Solid-State Circuits · 2019 · 51 citations

Engineering, Emerging Memory Technology, Computer Architecture +18

13.1 A 1.33Tb 4-bit/Cell 3D-Flash Memory on a 96-Word-Line-Layer Technology

Noboru Shibata, K. Kanda, Tatsuo Shimizu et al. · 2019 · 49 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +16

A 19 nm 112.8 mm$^{2}$ 64 Gb Multi-Level Flash Memory With 400 Mbit/sec/pin 1.8 V Toggle Mode Interface

K. Kanda, Noboru Shibata, Toshiki Hisada et al. · IEEE Journal of Solid-State Circuits · 2012 · 24 citations

Non-volatile Memory, Electrical Engineering, Memory Architecture +14