A 120mm2 16Gb 4-MLC NAND Flash Memory with 43nm CMOS Technology - Concepedia

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A 120mm2 16Gb 4-MLC NAND Flash Memory with 43nm CMOS Technology

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References

2008

Year

Dai NAKAMURA, K. Kanda, Masaru Koyanagi, Toshio Yamamura, Koji Hosono, Masahiro Yoshihara, Toru Miwa, Yosuke Kato, Alex Mak, Siu Lung Chan,

IEICE Technical Report; IEICE Tech. Rep.

EngineeringFlash MemoryComputer EngineeringCmos TechnologyComputer ArchitectureMemory DeviceSemiconductor MemoryMicroelectronics

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