Masahiro Yoshihara

A 120mm2 16Gb 4-MLC NAND Flash Memory with 43nm CMOS Technology

Dai NAKAMURA, K. Kanda, Masaru Koyanagi et al. · IEICE Technical Report; IEICE Tech. Rep. · 2008 · 48 citations

Engineering, Computer Engineering, Electrical Engineering +13

30.4 A 1Tb 3b/Cell 3D-Flash Memory in a 170+ Word-Line-Layer Technology

Higuchi Tsutomu, Takuyo Kodama, Koji Kato et al. · 2021 · 30 citations

Engineering, Computer Engineering, Computer Science +13

A 120mm² 16Gb 4-MLC NAND Flash Memory with 43nm CMOS Technology

K. Kanda, Masaru Koyanagi, Toshio Yamamura et al. · 2008 · 24 citations

Engineering, Computer Engineering, Electrical Engineering +14

The origins of backward priming effects in logographic scripts for four-character words

Huilan Yang, Yasushi Hino, Jingjun Chen et al. · Journal of Memory and Language · 2020 · 22 citations

Language Studies, Linguistics, Psycholinguistics +3

13.5 A 128Gb 1b/Cell 96-Word-Line-Layer 3D Flash Memory to Improve Random Read Latency with t_PROG=75µs and t_R=4µs

Toshiyuki Kouchi, Noriyasu Kumazaki, Masashi Yamaoka et al. · 2020 · 17 citations

Engineering, Computer Engineering, Computer Science +17