Concepedia
Statistics
Publications
6
Citations
272
H-Index
Active since
2008
Affiliations
Toshiba (Japan)(Current)
Western Digital (United States)
Yosuke Kato is an author at Toshiba (Japan) specializing in computer engineering, nand flash memory, and flash memory.
Publications per year
2008–2022
13.5 A 512Gb 3-bit/Cell 3D Flash Memory on 128-Wordline-Layer with 132MB/s Write Performance Featuring Circuit-Under-Array Technology
Chang Siau, Kwang Ho Kim, Seungpil Lee et al. · 2019 · 85 citations
Engineering, Computer Engineering, Electrical Engineering +15
11.1 A 512Gb 3b/cell flash memory on 64-word-line-layer BiCS technology
Ryuji Yamashita, Sagar Magia, Tsutomu Higuchi et al. · 2017 · 62 citations
A 120mm2 16Gb 4-MLC NAND Flash Memory with 43nm CMOS Technology
Dai NAKAMURA, K. Kanda, Masaru Koyanagi et al. · IEICE Technical Report; IEICE Tech. Rep. · 2008 · 48 citations
Engineering, Computer Engineering, Electrical Engineering +13
A 1-Tb 4b/Cell 4-Plane 162-Layer 3D Flash Memory With a 2.4-Gb/s I/O Speed Interface
J. Yuh, Jason Li, Heguang Li et al. · 2022 IEEE International Solid- State Circuits Conference (ISSCC) · 2022 · 29 citations
Engineering, Computer Engineering, Computer Science +15
A 19 nm 112.8 mm$^{2}$ 64 Gb Multi-Level Flash Memory With 400 Mbit/sec/pin 1.8 V Toggle Mode Interface
K. Kanda, Noboru Shibata, Toshiki Hisada et al. · IEEE Journal of Solid-State Circuits · 2012 · 24 citations
Engineering, Computer Engineering, Electrical Engineering +16
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