Ryuji Yamashita

11.1 A 512Gb 3b/cell flash memory on 64-word-line-layer BiCS technology

Ryuji Yamashita, Sagar Magia, Tsutomu Higuchi et al. · 2017 · 61 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +16

7.1 A low-power 64Gb MLC NAND-flash memory in 15nm CMOS technology

Mario Sako, Yoshihisa Watanabe, Takao Nakajima et al. · 2015 · 33 citations

Non-volatile Memory, Electrical Engineering, Engineering +15

30.4 A 1Tb 3b/Cell 3D-Flash Memory in a 170+ Word-Line-Layer Technology

Higuchi Tsutomu, Takuyo Kodama, Koji Kato et al. · 2021 · 28 citations

Engineering, Emerging Memory Technology, Computer Architecture +17

A 19 nm 112.8 mm$^{2}$ 64 Gb Multi-Level Flash Memory With 400 Mbit/sec/pin 1.8 V Toggle Mode Interface

K. Kanda, Noboru Shibata, Toshiki Hisada et al. · IEEE Journal of Solid-State Circuits · 2012 · 24 citations

Non-volatile Memory, Electrical Engineering, Memory Architecture +14

A Low Power 64 Gb MLC NAND-Flash Memory in 15 nm CMOS Technology

Mario Sako, Yoshihisa Watanabe, Takao Nakajima et al. · IEEE Journal of Solid-State Circuits · 2015 · 22 citations

Non-volatile Memory, Electrical Engineering, Engineering +14