2015 · 33 citations · 6 references
Non-volatile MemoryElectrical EngineeringEngineeringNand Flash MemoriesEmerging Memory TechnologyFlash MemoryComputer EngineeringComputer ArchitectureCmos TechnologyMlc Nand-flash MemoryMemory DeviceMemory DevicesSemiconductor MemoryHigher ThroughputMicroelectronicsLow-power 64GbSmart Phones3D Memory
The demand for high-throughput NAND Flash memory systems for mobile applications such as smart phones, tablets, and laptop PCs with solid-state drives (SSDs) has been growing recently. To obtain higher throughput, systems employ multiple NAND Flash memories operating simultaneously in parallel. The available power for a mobile device is severely restricted and the peak total operating current may be high enough to cause large supply-voltage drop or even an unexpected system shutdown. Therefore it is important for NAND Flash memories to reduce operating power and peak operating current.
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A 64Gb 533Mb/s DDR interface MLC NAND Flash in sub-20nm technology
Daeyeal Lee, Ik‐Joon Chang, Sang-Yong Yoon et al. · 2012 · 48 citations
Hardware Security, Non-volatile Memory, Electrical Engineering +11
A 113mm2 32Gb 3b/cell NAND flash memory
T. Futatsuyama, Norihiro Fujita, Naoya Tokiwa et al. · 2009 · 36 citations
Non-volatile Memory, Electrical Engineering, Memory Architecture +15
A 34MB/s-Program-Throughput 16Gb MLC NAND with All-Bitline Architecture in 56nm
Raul Cernea, Long Pham, Farookh Moogat et al. · 2008 · 26 citations
19.2 A 93.4mm<sup>2</sup> 64Gb MLC NAND-flash memory with 16nm CMOS technology
Sungdae Choi, Duckju Kim, Sungwook Choi et al. · 2014 · 21 citations
High Density, Engineering, A 93.4Mm +10