T. Futatsuyama

A 512Gb 3b/Cell 3D flash memory on a 96-word-line-layer technology

Maejima Hiroshi, K. Kanda, Susumu Fujimura et al. · 2018 · 75 citations

Non-volatile Memory, Electrical Engineering, Memory Architecture +15

A 56-nm CMOS 99-${\hbox {mm}}^{2} $ 8-Gb Multi-Level NAND Flash Memory With 10-MB/s Program Throughput

Ken Takeuchi, Yasushi Kameda, Susumu Fujimura et al. · IEEE Journal of Solid-State Circuits · 2007 · 70 citations

Non-volatile Memory, Engineering, Vlsi Design +16

A 56nm CMOS 99mm2 8Gb Multi-level NAND Flash Memory with 10MB/s Program Throughput

Ken Takeuchi, Y. Kameda, Shinji Fujimura et al. · 2006 · 37 citations

Non-volatile Memory, Electrical Engineering, Efficient Use +15

A 113mm2 32Gb 3b/cell NAND flash memory

T. Futatsuyama, Norihiro Fujita, Naoya Tokiwa et al. · 2009 · 36 citations

Non-volatile Memory, Electrical Engineering, Memory Architecture +15

A 125-mm/sup 2/ 1-Gb NAND flash memory with 10-MByte/s program speed

K. Imamiya, Hiroshi Nakamura, T. Himeno et al. · IEEE Journal of Solid-State Circuits · 2002 · 24 citations

Hardware Security, Non-volatile Memory, Electrical Engineering +12