Naoya Tokiwa

13.5 A 512Gb 3-bit/Cell 3D Flash Memory on 128-Wordline-Layer with 132MB/s Write Performance Featuring Circuit-Under-Array Technology

Chang Siau, Kwang Ho Kim, Seungpil Lee et al. · 2019 · 85 citations

Engineering, Computer Engineering, Electrical Engineering +15

A 56-nm CMOS 99-${\hbox {mm}}^{2} $ 8-Gb Multi-Level NAND Flash Memory With 10-MB/s Program Throughput

Ken Takeuchi, Yasushi Kameda, Susumu Fujimura et al. · IEEE Journal of Solid-State Circuits · 2007 · 70 citations

Engineering, Computer Engineering, Electrical Engineering +14

A 113mm2 32Gb 3b/cell NAND flash memory

T. Futatsuyama, Norihiro Fujita, Naoya Tokiwa et al. · 2009 · 37 citations

Engineering, Computer Engineering, Electrical Engineering +16

A 56nm CMOS 99mm2 8Gb Multi-level NAND Flash Memory with 10MB/s Program Throughput

Ken Takeuchi, Y. Kameda, Shinji Fujimura et al. · 2006 · 37 citations

Engineering, Computer Engineering, Electrical Engineering +16

A 146-<tex>$hbox mm^2$</tex>8-Gb Multi-Level NAND Flash Memory With 70-nm CMOS Technology

T. Hara, Koichi Fukuda, K. Kanazawa et al. · IEEE Journal of Solid-State Circuits · 2005 · 35 citations

Engineering, Computer Engineering, Electrical Engineering +17