A 70 nm 16 Gb 16-Level-Cell NAND flash Memory

Noboru Shibata, K. Isobe, K. Iwasa, +24

IEEE Journal of Solid-State Circuits

Hardware SecurityNon-volatile MemoryElectrical EngineeringNm Design RuleGb 16-Level-cell +10

A 5.6MB/s 64Gb 4b/Cell NAND Flash memory in 43nm CMOS

Cuong Trinh, Noboru Shibata, Takumi Nakano, +52

Non-volatile MemoryEngineeringTechnology ScalingFlash MemoryComputer Engineering +11

A 56nm CMOS 99mm2 8Gb Multi-level NAND Flash Memory with 10MB/s Program Throughput

Ken Takeuchi, Y. Kameda, Shinji Fujimura, +32

Non-volatile MemoryElectrical EngineeringEfficient UseEngineeringNoise-cancellation Circuits +13

A 146-<tex>$hbox mm^2$</tex>8-Gb Multi-Level NAND Flash Memory With 70-nm CMOS Technology

T. Hara, Koichi Fukuda, K. Kanazawa, +21

IEEE Journal of Solid-State Circuits

Non-volatile MemoryElectrical EngineeringChip SizeEngineering70-Nm Cmos Technology +10

A GaAs single balanced mixer MMIC with built-in active balun for personal communication systems

Hirotaka Koizumi, Shunsuke Nagata, K. Tateoka, +2

Built-in Active BalunElectrical EngineeringBarium Strontium TitanateRadio FrequencyMixed-signal Integrated Circuit +5

A 120-mm/sup 2/ 64-Mb NAND flash memory achieving 180 ns/Byte effective program speed

Jin‐Ki Kim, Koji Sakui, Sung-Soo Lee, +15

IEEE Journal of Solid-State Circuits

Non-volatile MemoryElectrical EngineeringEngineeringPage Sensing Time120-Mm/sup 2/ +9

Phase distortion mechanism of a GaAs FET power amplifier for digital cellular application

Hikaru Ikeda, Toshio Ishizaki, Yoshishige Yoshikawa, +2

Phase Distortion MechanismElectrical EngineeringCircuit ParametersEngineeringRf Semiconductor +6

A GaAs MCM power amplifier of 3.6 V operation with high efficiency of 49% for 0.9 GHz digital cellular phone systems

K. Tateoka, Akira Sugimura, H. Furukawa, +3

Low-power ElectronicsElectrical EngineeringAln Multilayer McmEngineeringRf Semiconductor +10

A 146mm/sup 2/ 8Gb nand flash memory with 70nm CMOS technology

T. Hara, Koichi Fukuda, K. Kanazawa, +21

Non-volatile MemoryElectrical EngineeringEngineeringNanoelectronicsNanotechnology +10

Deposition and characterization of amorphous aluminum nitride thin films for a gate insulator

Haruyoshi Oikawa, Ryota Akiyama, K. Kanazawa, +8

Thin Solid Films

Materials ScienceAluminium NitrideElectrical EngineeringSemiconductor DeviceAmorphous Aluminum +6