Farookh Moogat

A 34 MB/s MLC Write Throughput 16 Gb NAND With All Bit Line Architecture on 56 nm Technology

Raul-Adrian Cernea, Long Pham, Farookh Moogat et al. · IEEE Journal of Solid-State Circuits · 2009 · 76 citations

Engineering, Computer Engineering, Computer Science +14

A 5.6MB/s 64Gb 4b/Cell NAND Flash memory in 43nm CMOS

Cuong Trinh, Noboru Shibata, Takumi Nakano et al. · 2009 · 69 citations

Engineering, Computer Engineering, Electrical Engineering +16

11.1 A 512Gb 3b/cell flash memory on 64-word-line-layer BiCS technology

Ryuji Yamashita, Sagar Magia, Tsutomu Higuchi et al. · 2017 · 62 citations

Engineering, Computer Engineering, Electrical Engineering +15

128Gb 3b/cell NAND flash memory in 19nm technology with 18MB/s write rate and 400Mb/s toggle mode

Yan Li, Seungpil Lee, Ken Oowada et al. · 2012 · 46 citations

Engineering, Computer Engineering, Computer Science +14

A 1-Tb 4b/Cell 4-Plane 162-Layer 3D Flash Memory With a 2.4-Gb/s I/O Speed Interface

J. Yuh, Jason Li, Heguang Li et al. · 2022 IEEE International Solid- State Circuits Conference (ISSCC) · 2022 · 29 citations

Engineering, Computer Engineering, Computer Science +15