Raul Cernea

A 5.6MB/s 64Gb 4b/Cell NAND Flash memory in 43nm CMOS

Cuong Trinh, Noboru Shibata, Takumi Nakano et al. · 2009 · 69 citations

Non-volatile Memory, Engineering, Technology Scaling +13

A 120mm2 16Gb 4-MLC NAND Flash Memory with 43nm CMOS Technology

Dai NAKAMURA, K. Kanda, Masaru Koyanagi et al. · IEICE Technical Report; IEICE Tech. Rep. · 2008 · 48 citations

Engineering, Flash Memory, Computer Engineering +5

128Gb 3b/cell NAND flash memory in 19nm technology with 18MB/s write rate and 400Mb/s toggle mode

Yan Li, Seungpil Lee, Ken Oowada et al. · 2012 · 46 citations

Non-volatile Memory, Electrical Engineering, Toggle Mode +15

A 16Gb 3b/ Cell NAND Flash Memory in 56nm with 8MB/s Write Rate

Yan Li, Seungpil Lee, Yupin Fong et al. · 2008 · 46 citations · Full text

D2 Chips, Electrical Engineering, Non-volatile Memory +13

A 34MB/s-Program-Throughput 16Gb MLC NAND with All-Bitline Architecture in 56nm

Raul Cernea, Long Pham, Farookh Moogat et al. · 2008 · 26 citations

Electrical Engineering, Engineering, Vlsi Design +14