U. Kretzer - Concepedia

Author

U. Kretzer

Freiberger Compound Materials (Germany)

Also Known As

U Kretzer, U. Kretzer, Ullrich Kretzer

Publications

303

Citations

H-Index

Concepts

All Affiliations

Freiberger Compound Materials (Germany)TU Bergakademie Freiberg

About

U. Kretzer is an author at Freiberger Compound Materials (Germany) specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	12	244
2	Applied Physics	11	12	244
3	Electrical Engineering	7	7	179
4	Chemistry	2	2	29
5	Natural Sciences	1	1	12

U. Kretzer

Publications

244

Citations

H-Index

Page 1

	Year	Citations
LEC- and VGF-growth of SI GaAs single crystals—recent developments and current issues M. Jurisch, F. Börner, Th. Bünger, Journal of Crystal Growth SemiconductorsCurrent IssuesElectrical EngineeringSemiconductor TechnologyEngineering	2004	57
Photoelastic characterization of residual stress in GaAs-wafers H.‐D. Geiler, H. Karge, Matthias Wagner, Materials Science in Semiconductor Processing Electrical EngineeringEngineeringOptical PropertiesApplied PhysicsResidual Stress	2006	24
200mm GaAs crystal growth by the temperature gradient controlled LEC method A. Seidl, S. Eichler, T. Flade, Journal of Crystal Growth Electrical EngineeringEngineeringCrystal Growth TechnologyApplied PhysicsTemperature Gradient	2001	22
Growth and characterization of 200mm SI GaAs crystals grown by the VGF method J. Stenzenberger, Th. Bünger, F. Börner, Journal of Crystal Growth Materials EngineeringElectrical EngineeringEpitaxial GrowthEngineeringCrystal Growth Technology	2003	22
GaAs wafer mapping by microwave-detected photoconductivity J. R. Niklas, W. Siegel, M. Jurisch, Materials Science and Engineering B SemiconductorsPhotonicsElectrical EngineeringPhotoelectric SensorEngineering	2001	19
Development of a vertical gradient freeze process for low EPD GaAs substrates Th. Bünger, D. Behr, S. Eichler, Materials Science and Engineering B Electrical EngineeringEngineeringApplied PhysicsMolecular Beam EpitaxyMicroelectronics	2001	18
State of the art 6″ SI GaAs wafers made of conventionally grown LEC-crystals T. Flade, M. Jurisch, André Kleinwechter, Journal of Crystal Growth SemiconductorsSi Gaas WafersElectrical EngineeringSemiconductor TechnologyEngineering	1999	17
Optical cross-sections and distribution of Fe2+ and Fe3+ in semi-insulating liquid encapsulated Czochralski grown InP:Fe A. Seidl, F. Mosel, Jochen Friedrich, Materials Science and Engineering B Materials ScienceOptical MaterialsCzochralski Grown InpEngineeringApplied Physics	1993	17
A combined carbon and oxygen segregation model for the LEC growth of SI GaAs S. Eichler, A. Seidl, F. Börner, Journal of Crystal Growth Oxygen Segregation ModelEngineeringPhysicsApplied PhysicsSi Gaas	2002	14
Charge states and quantitative infrared spectroscopy of electrically active oxygen centers in gallium arsenide H. Ch. Alt, Y. V. Gomeniuk, U. Kretzer Journal of Applied Physics Optical MaterialsEngineeringSolid-state ChemistryChemistryElectronic Structure	2007	12

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