S. Eichler - Concepedia

Author

S. Eichler

Martin Luther University Halle-Wittenberg

Also Known As

S Eichler, S. Eichler, St. Eichler

Publications

693

Citations

H-Index

Concepts

All Affiliations

Martin Luther University Halle-Wittenberg Freiberger Compound Materials (Germany)Institut für Innovative Technologien (Germany)

About

S. Eichler is an author at Martin Luther University Halle-Wittenberg specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	14	20	528
2	Applied Physics	12	15	408
3	Electrical Engineering	9	9	283
4	Chemistry	3	3	99
5	Natural Sciences	2	2	51

S. Eichler

Publications

538

Citations

H-Index

Page 1

	Year	Citations
Ga vacancies in low-temperature-grown GaAs identified by slow positrons J. Gebauer, R. Krause‐Rehberg, S. Eichler, Applied Physics Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringWide-bandgap SemiconductorEngineering	1997	63
LEC- and VGF-growth of SI GaAs single crystals—recent developments and current issues M. Jurisch, F. Börner, Th. Bünger, Journal of Crystal Growth SemiconductorsCurrent IssuesElectrical EngineeringSemiconductor TechnologyEngineering	2004	57
Do the CONTIN or the MELT programs accurately reveal the o-Ps lifetime distribution in polymers? Analysis of experimental lifetime spectra of amorphous polymers G. Dlubek, Ch. Hübner, S. Eichler Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Materials ScienceExperimental Lifetime SpectraEngineeringPolymer StabilityPolymer Science	1998	42
Defects in electron-irradiated Si studied by positron-lifetime spectroscopy A. Polity, F. Börner, S. Huth, Physical review. B, Condensed matter Electrical EngineeringPositron-lifetime SpectroscopyEngineeringPhysicsPositron Annihilation Spectroscopy	1998	42
Do MELT or CONTIN Programs Accurately Reveal the o-Ps Lifetime Distribution in Polymers? Analysis of Simulated Lifetime Spectra G. Dlubek, S. Eichler physica status solidi (a) EngineeringPositron Annihilation SpectroscopySoft MatterPolymersCharacteristic Lifetimes	1998	33
Investigation of CxSi defects in C implanted silicon by transmission electron microscopy P. Werner, S. Eichler, G. Mariani, Applied Physics Letters EngineeringTransmission Electron MicroscopySilicon On InsulatorDefect ToleranceIon Implantation	1997	31
Reasons for the deviation of I1/I3 and τ1 from the expected lifetime parameters of positronium annihilation in polymers G. Dlubek, S. Eichler, Ch. Hübner, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms EngineeringPhysicsPositron Annihilation SpectroscopyNatural SciencesLifetime Parameters	1999	30
Does the MELT Program Accurately Reveal the Lifetime Distribution in Polymers? G. Dlubek, S. Eichler, Ch. Hübner, physica status solidi (a) Chemical KineticsEngineeringChemistrySoft MatterPolymers	1999	27
Three-dimensional modeling of melt flow and interface shape in the industrial liquid-encapsulated Czochralski growth of GaAs Daniel Vizman, S. Eichler, Jochen Friedrich, Journal of Crystal Growth Materials ScienceElectrical EngineeringEngineeringCrystal Growth TechnologyApplied Physics	2004	24
Photoelastic characterization of residual stress in GaAs-wafers H.‐D. Geiler, H. Karge, Matthias Wagner, Materials Science in Semiconductor Processing Electrical EngineeringEngineeringOptical PropertiesApplied PhysicsResidual Stress	2006	24

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