Contributions from gallium vacancies and carbon-related defects to the “yellow luminescence” in GaN

R. Armitage, William Hong, Qing Yang, +5

Applied Physics Letters

Wide-bandgap SemiconductorOptical MaterialsEngineeringCarbon-related DefectsLuminescence Property +15

Effects of the growth temperature and As/Ga flux ratio on the incorporation of excess As into low temperature grown GaAs

M. Luysberg, Hyunchul Sohn, A. Arun Prasad, +5

Journal of Applied Physics

Wide-bandgap SemiconductorElectrical EngineeringStructural PropertiesGrowth TemperaturePoint Defect Concentrations +11

Identification and Quantification of Defects in Highly Si-Doped GaAs by Positron Annihilation and Scanning Tunneling Microscopy

J. Gebauer, R. Krause‐Rehberg, C. Domke, +2

Physical Review Letters

Scanning Tunneling MicroscopyWide-bandgap SemiconductorEngineeringSemiconductor DeviceSi Concentration +16

Lattice-matched HfN buffer layers for epitaxy of GaN on Si

R. Armitage, Qing Yang, H. Feick, +4

Applied Physics Letters

SemiconductorsMaterials ScienceElectrical EngineeringWide-bandgap SemiconductorEngineering +12

Ga vacancies in low-temperature-grown GaAs identified by slow positrons

J. Gebauer, R. Krause‐Rehberg, S. Eichler, +3

Applied Physics Letters

SemiconductorsSemiconductor TechnologyElectrical EngineeringWide-bandgap SemiconductorEngineering +8

Determination of the Gibbs free energy of formation of Ga vacancies in GaAs by positron annihilation

J. Gebauer, M. Lausmann, F. Redmann, +4

Physical review. B, Condensed matter

Wide-bandgap SemiconductorElectrical EngineeringPositron AnnihilationEngineeringPhysics +12

Defect identification in GaAs grown at low temperatures by positron annihilation

J. Gebauer, F. Börner, R. Krause‐Rehberg, +8

Journal of Applied Physics

EngineeringPositron Annihilation SpectroscopySemiconductorsPositron AnnihilationAnnihilation Momentum Distribution +15

Do Arsenic Interstitials Really Exist in As-Rich GaAs?

Torsten E.M. Staab, R. M. Nieminen, J. Gebauer, +4

Physical Review Letters

Ii-vi SemiconductorElectrical EngineeringPoint DefectsEngineeringPhysics +10

On the sensitivity limit of positron annihilation: detection of vacancies in as-grown silicon

J. Gebauer, F. Rudolf, A. Polity, +3

Applied Physics A

Positron AnnihilationEngineeringPhysicsPositron Annihilation SpectroscopyApplied Physics +6

Defect Control in As-Rich GaAs

P. Specht, Sungho Jeong, Hoon Sohn, +5

Materials science forum

SemiconductorsElectrical EngineeringEngineeringDefect FormationDefect Tolerance +2