J. Gebauer

Contributions from gallium vacancies and carbon-related defects to the “yellow luminescence” in GaN

R. Armitage, William Hong, Qing Yang et al. · Applied Physics Letters · 2003 · 174 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +17

Effects of the growth temperature and As/Ga flux ratio on the incorporation of excess As into low temperature grown GaAs

M. Luysberg, Hyunchul Sohn, A. Arun Prasad et al. · Journal of Applied Physics · 1998 · 125 citations

Wide-bandgap Semiconductor, Electrical Engineering, Structural Properties +13

Identification and Quantification of Defects in Highly Si-Doped GaAs by Positron Annihilation and Scanning Tunneling Microscopy

J. Gebauer, R. Krause‐Rehberg, C. Domke et al. · Physical Review Letters · 1997 · 71 citations

Scanning Tunneling Microscopy, Wide-bandgap Semiconductor, Engineering +18

Lattice-matched HfN buffer layers for epitaxy of GaN on Si

R. Armitage, Qing Yang, H. Feick et al. · Applied Physics Letters · 2002 · 68 citations · Full text

Semiconductors, Materials Science, Electrical Engineering +14

Ga vacancies in low-temperature-grown GaAs identified by slow positrons

J. Gebauer, R. Krause‐Rehberg, S. Eichler et al. · Applied Physics Letters · 1997 · 63 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +10