C. Domke

Microscopic identification of the compensation mechanisms in Si-doped GaAs

C. Domke, Ph. Ebert, M. Heinrich et al. · Physical review. B, Condensed matter · 1996 · 125 citations

Engineering, Semiconductor Physics, Semiconductor Materials +18

Contribution of Surface Resonances to Scanning Tunneling Microscopy Images: (110) Surfaces of III-V Semiconductors

Ph. Ebert, Bernd Engels, P. Richard et al. · Physical Review Letters · 1996 · 81 citations

Engineering, Microscopy, Semiconductors +19

Identification and Quantification of Defects in Highly Si-Doped GaAs by Positron Annihilation and Scanning Tunneling Microscopy

J. Gebauer, R. Krause‐Rehberg, C. Domke et al. · Physical Review Letters · 1997 · 71 citations

Scanning Tunneling Microscopy, Wide-bandgap Semiconductor, Engineering +18

Thermal formation of Zn-dopant-vacancy defect complexes on InP(110) surfaces

Ph. Ebert, M. Heinrich, Matthias Simon et al. · Physical review. B, Condensed matter · 1996 · 61 citations

Materials Science, Ii-vi Semiconductor, Thermal Formation +13

Oscillating contrast in room-temperature scanning tunneling microscope images of localized charges in III–V semiconductor cleavage surfaces

C. Domke, M. Heinrich, Ph. Ebert et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1998 · 35 citations

Categoryquantum Electronics, Engineering, Microscopy +22