F. Börner - Concepedia

Author

F. Börner

Martin Luther University Halle-Wittenberg ORCID

Also Known As

Borner, F., Börner, F., F Börner, F. Borner, F. BÖRNER, F. Börner, F. D. Börner, F.D. Börner, Fabian Börner

Publications

972

Citations

H-Index

Concepts

All Affiliations

Martin Luther University Halle-Wittenberg Freiberger Compound Materials (Germany)Universität der Bundeswehr München Technische Universität Braunschweig

About

F. Börner is an author at Martin Luther University Halle-Wittenberg specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	15	825
2	Applied Physics	10	10	257
3	Natural Sciences	2	2	47
4	Chemistry	2	2	43
5	Civil Engineering	1	1	312

F. Börner

Publications

862

Citations

H-Index

Page 1

	Year	Citations
Evaluation of transport and storage properties in the soil and groundwater zone from induced polarization measurements<sup>1</sup> F. Börner, J. R. Schopper, Andreas Weller Geophysical Prospecting EngineeringHydrogeophysicsBorehole SpectralGroundwater ZoneHydrogeologic System	1996	312
CONTAMINATION INDICATIONS DERIVED FROM ELECTRICAL PROPERTIES IN THE LOW FREQUENCY RANGE<sup>1</sup> F. Börner, M. Gruhne, Jürgen Schön Geophysical Prospecting Rock TestingEngineeringComplex Interface ConductivityWater-rock InteractionElectromagnetic Compatibility	1993	135
Measurements of spectral induced polarization for environmental purposes Andreas Weller, F. Börner Environmental Geology EngineeringImaging SpectroscopyOptical PropertiesSpectroscopySpectral Imaging	1996	74
LEC- and VGF-growth of SI GaAs single crystals—recent developments and current issues M. Jurisch, F. Börner, Th. Bünger, Journal of Crystal Growth SemiconductorsCurrent IssuesElectrical EngineeringSemiconductor TechnologyEngineering	2004	57
Defects in electron-irradiated Si studied by positron-lifetime spectroscopy A. Polity, F. Börner, S. Huth, Physical review. B, Condensed matter Electrical EngineeringPositron-lifetime SpectroscopyEngineeringPhysicsPositron Annihilation Spectroscopy	1998	42
Defect identification in GaAs grown at low temperatures by positron annihilation J. Gebauer, F. Börner, R. Krause‐Rehberg, Journal of Applied Physics EngineeringPositron Annihilation SpectroscopySemiconductorsPositron AnnihilationAnnihilation Momentum Distribution	2000	38
Bulk detection of explosives and development of customized metal oxide semiconductor gas sensors for the identification of energetic materials K. Konstantynovski, G. Njio, F. Börner, Sensors and Actuators B Chemical Materials ScienceEnergetic MaterialsEngineeringSemiconductor Gas SensorsSensors	2017	26
Impurity gettering by vacancy-type defects in high-energy ion-implanted silicon at Rp /2 R. Krause‐Rehberg, F. Börner, F. Redmann Applied Physics Letters Materials EngineeringMaterials ScienceDefect ToleranceIon ImplantationPoint Defects	2000	25
Growth and characterization of 200mm SI GaAs crystals grown by the VGF method J. Stenzenberger, Th. Bünger, F. Börner, Journal of Crystal Growth Materials EngineeringElectrical EngineeringEpitaxial GrowthEngineeringCrystal Growth Technology	2003	22
Identification of getter defects in high-energy self-implanted silicon at Rp/2 R. Krause‐Rehberg, F. Börner, F. Redmann, Physica B Condensed Matter Defect ToleranceElectrical EngineeringGetter DefectsEngineeringPhysics	2001	21

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