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200mm GaAs crystal growth by the temperature gradient controlled LEC method

DOI

22

Citations

9

References

2001

Year

A. Seidl, S. Eichler, T. Flade, M. Jurisch, Andreas Köhler, U. Kretzer, B. Weinert
Journal of Crystal Growth

References

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Journal of Crystal Growth

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H. F. Goldstein, Edgar Knobloch, Isabel Mercader,

Journal of Fluid Mechanics

1994

84

Experimental observation and numerical simulation of wave patterns in a Czochralski silicon melt

A. Seidl, G. McCord, G. Müller,

Journal of Crystal Growth

1994

60

Control of thermal conditions during crystal growth by inverse modeling

Matthias Kurz, G. Müller

Journal of Crystal Growth

2000

49

Three-dimensional simulation of flow and thermal field in a Czochralski melt using a block-structured finite-volume method

Biswajit Basu, Sven Enger, M. Breuer,

Journal of Crystal Growth

2000

46

Interface shape and crystallinity in LEC GaAs

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Journal of Crystal Growth

1991

39

Numerical simulation of the LEC-growth of GaAs crystals with account of high-pressure gas convection

J. Fainberg, H.-J. Leister, G. Müller

Journal of Crystal Growth

1997

30

State of the art 6″ SI GaAs wafers made of conventionally grown LEC-crystals

T. Flade, M. Jurisch, André Kleinwechter,

Journal of Crystal Growth

1999

17

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