H. Karge - Concepedia

Author

H. Karge

Friedrich Schiller University Jena

Also Known As

H . Karge, H Karge, H. Karge, Harald Karge

Publications

314

Citations

H-Index

Concepts

All Affiliations

Friedrich Schiller University Jena

About

H. Karge is an author at Friedrich Schiller University Jena specializing in engineering, applied physics, and optical properties.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	7	7	153
2	Applied Physics	6	6	137
3	Materials Science	3	3	67
4	Biomedical Engineering	1	1	92
5	Electrical Engineering	1	1	24

H. Karge

Publications

292

Citations

H-Index

Page 1

	Year	Citations
Ion implantation into LiNbO3 G. Götz, H. Karge Nuclear Instruments and Methods in Physics Research Ion ImplantationIon ProcessXenotransplantationBiomedical Engineering	1983	92
Radiation defects and optical properties of ion implanted silicon dioxide U. Katenkamp, H. Karge, Richard W. Prager Radiation Effects Materials ScienceIon ImplantationOptical MaterialsEngineeringCrystalline Defects	1980	41
Radiation damage and refractive index of ion-implanted LiNbO3 H. Karge, G. Götz, U. Jahn, Nuclear Instruments and Methods Ion ImplantationEngineeringOptical PropertiesRadiation EffectApplied Physics	1981	33
Radiation damage in ion-implanted quartz crystals. Part I: Nuclear and electronic energy deposition H. Fischer, G. Götz, H. Karge physica status solidi (a)	1983	26
Photoelastic characterization of residual stress in GaAs-wafers H.‐D. Geiler, H. Karge, Matthias Wagner, Materials Science in Semiconductor Processing Electrical EngineeringEngineeringOptical PropertiesApplied PhysicsResidual Stress	2006	24
Radiation damage in ion-implanted quartz crystals. II. Annealing behaviour H. Fischer, G. Götz, H. Karge physica status solidi (a)	1983	21
Photoelastic stress evaluation and defect monitoring in 300-mm-wafer manufacturing H.‐D. Geiler, Matthias Wagner, H. Karge, Materials Science in Semiconductor Processing EngineeringMechanical EngineeringStressstrain AnalysisStructural Health MonitoringResidual Stress	2002	16
Anisotropic Effects in N+-Implanted LiNbO3 S. Jetschke, H. Karge, K. Hehl physica status solidi (a) Materials ScienceCrystal StructureMaterial AnalysisEngineeringCrystalline Defects	1983	14
Detection and analysis of crystal defects in silicon by scanning infrared depolarization and photoluminescence heterodyne techniques H.‐D. Geiler, H. Karge, Matthias Wagner, Materials Science and Engineering B PhotoluminescenceEngineeringCrystalline DefectsPhysicsOptical Properties	2002	13
Correlation between structural defects and optical properties in ion-implanted silicon W. Wesch, Björn Glaser, G. Götz, physica status solidi (a) Materials ScienceIon ImplantationOptical MaterialsPoint DefectsHigher Implantation Temperatures	1981	12

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