Growth and characterization of 200mm SI GaAs crystals grown by the VGF method

Contactless evaluation of semi-insulating GaAs wafer resistivity using the time-dependent charge measurement

R. Stibal, J. Windscheif, W. Jantz · Semiconductor Science and Technology · 1991 · 111 citations

Engineering, Electrical Engineering, Materials Science +17

The Preparation of Large Single Crystals

H. C. Ramsperger, Eugene H. Melvin · Journal of the Optical Society of America · 1927 · 26 citations

Natural Sciences, Materials Science, Crystal Structure +7

200mm GaAs crystal growth by the temperature gradient controlled LEC method

A. Seidl, S. Eichler, T. Flade et al. · Journal of Crystal Growth · 2001 · 22 citations

Natural Sciences, Materials Engineering, Materials Science +13

Carbon, oxygen, boron, hydrogen and nitrogen in the LEC growth of SI GaAs: a thermochemical approach

Jürgen Korb, T. Flade, M. Jurisch et al. · Journal of Crystal Growth · 1999 · 22 citations

Engineering, Materials Engineering, Materials Science +13

Detection and analysis of crystal defects in silicon by scanning infrared depolarization and photoluminescence heterodyne techniques

H.‐D. Geiler, H. Karge, Matthias Wagner et al. · Materials Science and Engineering B · 2002 · 13 citations

Engineering, Materials Engineering, Materials Science +16