W. Siegel

On the Concentration Dependence of the Thermal Impurity‐to‐Band Activation Energies in Semiconductors

J. Monecke, W. Siegel, E. Ziegler et al. · physica status solidi (b) · 1981 · 65 citations

Znsip 2, Engineering, Semiconductor Physics +17

Electrical and EBIC Investigations of GaP Grain Boundaries

E. Ziegler, W. Siegel, H. Blumtritt et al. · physica status solidi (a) · 1982 · 28 citations

Materials Engineering, Materials Science, Electrical Engineering +13

Electrical properties of grain boundaries in n-type and p-type GaP

W. Siegel, G. Kühnel, E. Ziegler · physica status solidi (a) · 1981 · 27 citations

Engineering, Single Grain Boundaries, Semiconductor Device +16

Detection of deep levels and compensation mechanism in undoped, liquid-encapsulated Czochralski <i>n</i>-type GaAs

W. Siegel, G. Kühnel, H. A. Schneider et al. · Journal of Applied Physics · 1991 · 25 citations

Categoryquantum Electronics, Engineering, Temperature-dependent Hall Effect +17

Analysis of hall measurements on ZnSiP2

W. Siegel, E. Ziegler · physica status solidi (a) · 1974 · 22 citations

Materials Science, Vapour Phase Transport, Engineering +13