On the Concentration Dependence of the Thermal Impurity‐to‐Band Activation Energies in Semiconductors

J. Monecke, W. Siegel, E. Ziegler, +1

physica status solidi (b)

Znsip 2EngineeringSemiconductor PhysicsSemiconductor DeviceSemiconductors +15

Electrical and EBIC Investigations of GaP Grain Boundaries

E. Ziegler, W. Siegel, H. Blumtritt, +1

physica status solidi (a)

Materials EngineeringMaterials ScienceElectrical EngineeringElectromigration TechniqueGrain Boundaries +11

Electrical properties of grain boundaries in n-type and p-type GaP

W. Siegel, G. Kühnel, E. Ziegler

physica status solidi (a)

EngineeringSingle Grain BoundariesSemiconductor DeviceSemiconductorsGrain Boundaries +14

Detection of deep levels and compensation mechanism in undoped, liquid-encapsulated Czochralski <i>n</i>-type GaAs

W. Siegel, G. Kühnel, H. A. Schneider, +2

Journal of Applied Physics

Categoryquantum ElectronicsEngineeringTemperature-dependent Hall EffectSemiconductor DeviceSemiconductors +15

Analysis of hall measurements on ZnSiP2

W. Siegel, E. Ziegler

physica status solidi (a)

Materials ScienceVapour Phase TransportEngineeringCrystal MaterialCrystal Growth Technology +11

Electron and hole mobility in ZnSiP2

W. Siegel, A. Heinrich, E. Ziegler

physica status solidi (a)

Materials ScienceSemiconductorsIi-vi SemiconductorTransition Metal ChalcogenidesEngineering +11

A positron annihilation and Hall effect study of vacancy defects in III-V compound semiconductors. I. Gallium phosphide

R. Krause‐Rehberg, A. Polity, W. Siegel, +1

Semiconductor Science and Technology

EngineeringPositron Annihilation SpectroscopyVacuum DeviceSemiconductorsPositron Annihilation +16

GaAs wafer mapping by microwave-detected photoconductivity

J. R. Niklas, W. Siegel, M. Jurisch, +1

Materials Science and Engineering B

SemiconductorsPhotonicsElectrical EngineeringPhotoelectric SensorEngineering +4

Hole mobilities and the effective Hall factor in p-type GaAs

M. Wenzel, G. Irmer, J. Monecke, +1

Journal of Applied Physics

Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringCategoryquantum ElectronicsEngineering +9

Enhancement of the Hall mobility in undoped GaAs with low carrier concentration by light excitation

V. Kažukauskas, G. Kühnel, W. Siegel

Applied Physics Letters

Categoryquantum ElectronicsOptical MaterialsEngineeringLight ExcitationBand Gap +18