Publication | Closed Access
On the Concentration Dependence of the Thermal Impurity‐to‐Band Activation Energies in Semiconductors
65
Citations
30
References
1981
Year
Znsip 2EngineeringSemiconductor PhysicsSemiconductor DeviceSemiconductorsIi-vi SemiconductorHall Effect MeasurementsQuantum MaterialsCompound SemiconductorConcentration DependenceMaterials ScienceSemiconductor TechnologyPhysicsCrystalline DefectsIntrinsic ImpuritySemiconductor MaterialMajority ImpuritiesSolid-state PhysicCondensed Matter PhysicsApplied Physics
Abstract It is proved by Hall effect measurements on Te‐doped GaP and on ZnSiP 2 that the thermal activation energies of the majority impurities depend on the minority impurity concentrations. A new theoretical explanation for this concentration dependence is presented.
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