G. Kühnel

On the Concentration Dependence of the Thermal Impurity‐to‐Band Activation Energies in Semiconductors

J. Monecke, W. Siegel, E. Ziegler et al. · physica status solidi (b) · 1981 · 65 citations

Znsip 2, Engineering, Semiconductor Physics +17

Electrical properties of grain boundaries in n-type and p-type GaP

W. Siegel, G. Kühnel, E. Ziegler · physica status solidi (a) · 1981 · 27 citations

Engineering, Single Grain Boundaries, Semiconductor Device +16

Detection of deep levels and compensation mechanism in undoped, liquid-encapsulated Czochralski <i>n</i>-type GaAs

W. Siegel, G. Kühnel, H. A. Schneider et al. · Journal of Applied Physics · 1991 · 25 citations

Categoryquantum Electronics, Engineering, Temperature-dependent Hall Effect +17

A positron annihilation and Hall effect study of vacancy defects in III-V compound semiconductors. I. Gallium phosphide

R. Krause‐Rehberg, A. Polity, W. Siegel et al. · Semiconductor Science and Technology · 1993 · 20 citations

Engineering, Positron Annihilation Spectroscopy, Vacuum Device +18

Enhancement of the Hall mobility in undoped GaAs with low carrier concentration by light excitation

V. Kažukauskas, G. Kühnel, W. Siegel · Applied Physics Letters · 1997 · 17 citations

Categoryquantum Electronics, Optical Materials, Engineering +20