V. Ramachandran

A 0.13 m BiCMOS technology featuring a 200/280 GHz (fT/fmax) SiGe HBT

B. Orner, Q. Z. Liu, B.A. Rainey et al. · Bipolar/BiCMOS Circuits and Technology Meeting · 2003 · 36 citations

Electrical Engineering, Sige Hbt, Engineering +10

Increased Single-Event Transient Pulsewidths in a 90-nm Bulk CMOS Technology Operating at Elevated Temperatures

Matthew J. Gadlage, Jonathan R. Ahlbin, Balaji Narasimham et al. · IEEE Transactions on Device and Materials Reliability · 2009 · 27 citations

Engineering, Vlsi Design, Integrated Circuits +19

Modeling Total-Dose Effects for a Low-Dropout Voltage Regulator

V. Ramachandran, Balaji Narasimham, Daniel M. Fleetwood et al. · IEEE Transactions on Nuclear Science · 2006 · 24 citations

Engineering, Radiation Effect, Complex Postirradiation Recovery +16

A new approach to designing electronic systems for operation in extreme environments: Part II - The SiGe remote electronics unit

Troy England, Ryan M. Diestelhorst, Eleazar W. Kenyon et al. · IEEE Aerospace and Electronic Systems Magazine · 2012 · 22 citations

Remote Operation, Engineering, Space Environment +21

Single Event-Induced Error Propagation Through Nominally-off Transmission Gates

John M. Hutson, V. Ramachandran, B. L. Bhuva et al. · IEEE Transactions on Nuclear Science · 2006 · 21 citations

Nominally-off Transmission Gates, Engineering, Vlsi Design +16