B.A. Rainey

Metal-gate FinFET and fully-depleted SOI devices using total gate silicidation

J. Kedzierski, E. Nowak, T. Kanarsky et al. · 2003 · 171 citations

Electrical Engineering, Engineering, Total Gate Silicidation +9

High-performance symmetric-gate and CMOS-compatible V/sub t/ asymmetric-gate FinFET devices

J. Kedzierski, David Fried, E. Nowak et al. · 2002 · 60 citations

Low-power Electronics, Electrical Engineering, High-performance Symmetric-gate +11

Ultralow-power SRAM technology

R. Mann, W.W. Abadeer, M. Breitwisch et al. · IBM Journal of Research and Development · 2003 · 42 citations

Low-power Electronics, Electrical Engineering, Cell Leakage +12

A functional FinFET-DGCMOS SRAM cell

E. Nowak, B.A. Rainey, David Fried et al. · 2003 · 41 citations

Electrical Engineering, Cell Size, Engineering +9

A 0.13 m BiCMOS technology featuring a 200/280 GHz (fT/fmax) SiGe HBT

B. Orner, Q. Z. Liu, B.A. Rainey et al. · Bipolar/BiCMOS Circuits and Technology Meeting · 2003 · 36 citations

Electrical Engineering, Sige Hbt, Engineering +10