High-performance symmetric-gate and CMOS-compatible V/sub t/ asymmetric-gate FinFET devices

Abstract

Double-gate FinFET devices with asymmetric and symmetric polysilicon gates have been fabricated. Symmetric gate devices show drain currents competitive with fully optimized bulk silicon technologies. Asymmetric-gate devices show |V/sub t/|/spl sim/0.1 V, with off-currents less than 100 nA/um at V/sub gs/=0.