A 0.13 m BiCMOS technology featuring a 200/280 GHz (fT/fmax) SiGe HBT

B. Orner, Q. Z. Liu, B.A. Rainey, Andy Stricker, P. Geiss, P. Gray, M. Zierak, Michael S. Gordon, D.R. Collins, V. Ramachandran,

Bipolar/BiCMOS Circuits and Technology Meeting · 2003 · 36 citations · 0 references

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