P. Geiss

Comparison of transformation to low-resistivity phase and agglomeration of TiSi/sub 2/ and CoSi/sub 2/

J. B. Lasky, James Nakos, O.J. Cain et al. · IEEE Transactions on Electron Devices · 1991 · 346 citations

Natural Sciences, Materials Engineering, Materials Science +17

A 0.18 μm BiCMOS technology featuring 120/100 GHz (f/sub T//f/sub max/) HBT and ASIC-compatible CMOS using copper interconnect

Alvin Joseph, D. Coolbaugh, M. Zierak et al. · 2002 · 129 citations

Engineering, Electrical Engineering, Microelectronics +16

A 0.13 m BiCMOS technology featuring a 200/280 GHz (fT/fmax) SiGe HBT

B. Orner, Q. Z. Liu, B.A. Rainey et al. · Bipolar/BiCMOS Circuits and Technology Meeting · 2003 · 36 citations

Engineering, Electrical Engineering, Microelectronics +13

Evidence of Co/SiO₂ reaction during rapid thermal annealing

Herbert L. Ho, Tue Nguyen, Julius C. Chang et al. · Journal of materials research/Pratt's guide to venture capital sources · 1993 · 20 citations

Natural Sciences, Materials Engineering, Materials Science +9

A 0.24 μm SiGe BiCMOS mixed-signal RF production technology featuring a 47 GHz f/sub t/ HBT and 0.18 μm L/sub ett/ CMOS

St. Onge, D.L. Harame, James Dunn et al. · 2003 · 17 citations

Engineering, Electrical Engineering, Microelectronics +16