D.R. Collins - Concepedia

Author

D.R. Collins

Also Known As

Collins, Dean R., D. Collins, D. R. COLLINS, D. R. Collins, D.R. Collins, DEAN R. COLLINS, Dean Collins, Dean R. Collins

Publications

703

Citations

H-Index

Concepts

All Affiliations

Texas Instruments (United States)

About

D.R. Collins is an author at Texas Instruments (United States) specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	14	16	600
2	Applied Physics	9	9	288
3	Computer Engineering	7	7	261
4	Social Sciences	2	2	98
5	Medicine	1	1	12

D.R. Collins

Publications

627

Citations

H-Index

Page 1

	Year	Citations
Transversal filtering using charge-transfer devices D.D. Buss, D.R. Collins, William H. Bailey, IEEE Journal of Solid-State Circuits Electrical EngineeringEngineeringPhysicsFilter (Signal Processing)Ctd Transversal Filters	1973	119
Radar signal categorization using a neural network James A. Anderson, Michael T. Gately, P. Andrew Penz, Proceedings of the IEEE EngineeringNeural Networks (Machine Learning)Neural NetworkSocial SciencesNeurodynamics	1990	84
EFFECTS OF X-RAY IRRADIATION ON THE CHARACTERISTICS OF METAL-OXIDE-SILICON STRUCTURES D.R. Collins, C. T. Sah Applied Physics Letters Materials ScienceIon ImplantationX-ray SpectroscopyEngineeringCrystalline Defects	1966	44
Deformable mirror device spatial light modulators and their applicability to optical neural networks D.R. Collins, Jeffrey B. Sampsell, Larry J. Hornbeck, Applied Optics Optical DesignOptical MaterialsEngineeringOptic DesignSpatial Light Modulator	1989	42
h<sub>FE</sub>degradation due to reverse bias emitter-base junction stress D.R. Collins IEEE Transactions on Electron Devices Device ModelingSemiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineering	1969	40
EXCESS CURRENT GENERATION DUE TO REVERSE BIAS P-N JUNCTION STRESS D.R. Collins Applied Physics Letters Electrical EngineeringExcess P-n JunctionEngineeringIon DriftNanoelectronics	1968	40
A 0.13 m BiCMOS technology featuring a 200/280 GHz (fT/fmax) SiGe HBT B. Orner, Q. Z. Liu, B.A. Rainey, Bipolar/BiCMOS Circuits and Technology Meeting Electrical EngineeringSige HbtEngineeringMillimeter Wave TechnologyRf Semiconductor	2003	36
CCD memory options D.R. Collins, J.B. Barton, D.D. Buss, Aluminium NitrideEngineeringEmerging Memory TechnologyComputer ArchitecturePhase Change Memory	1973	35
Characteristics of thinned backside-illuminated charge-coupled device imagers S.R. Shortes, Wai-Wing Chan, Walden C. Rhines, Applied Physics Letters Short Wavelength OpticOptical MaterialsEngineeringOptoelectronic DevicesCharge-coupled Device	1974	30
ERRATA: Excess Current Generation due to Reverse Bias <i>P-N</i> Junction Stress D.R. Collins Applied Physics Letters Electrical EngineeringEngineeringStress-induced Leakage CurrentApplied PhysicsExcess Current Generation	1969	25

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