R. Mann

Fluctuation limits & amp; scaling opportunities for CMOS SRAM cells

A.J. Bhavnagarwala, Stephen Kosonocky, C. Radens et al. · 2006 · 158 citations

Non-volatile Memory, Electrical Engineering, Engineering +13

SRAM cell design for stability methodology

C. Wann, Robert Wong, David Frank et al. · 2005 · 146 citations

Hardware Security, Non-volatile Memory, Electrical Engineering +11

Reduction of the C54–TiSi2 phase transformation temperature using refractory metal ion implantation

R. Mann, G. L. Miles, Thomas A. Knotts et al. · Applied Physics Letters · 1995 · 124 citations

Materials Science, Ion Implantation, Engineering +6

Silicides and local interconnections for high-performance VLSI applications

R. Mann, L. A. Clevenger, P. Agnello et al. · IBM Journal of Research and Development · 1995 · 101 citations

Electrical Engineering, Electronic Devices, Engineering +12

Lateral ion implant straggle and mask proximity effect

Terence B. Hook, J. Brown, P.E. Cottrell et al. · IEEE Transactions on Electron Devices · 2003 · 99 citations

Device Modeling, Mask Proximity Effect, Electrical Engineering +14