John M. Hutson

Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes

Dennis R. Ball, John M. Hutson, Arto Javanainen et al. · IEEE Transactions on Nuclear Science · 2019 · 129 citations

Electrical Engineering, Engineering, Power Device +12

Effects of Breakdown Voltage on Single-Event Burnout Tolerance of High-Voltage SiC Power MOSFETs

Dennis R. Ball, K.F. Galloway, Robert A. Johnson et al. · IEEE Transactions on Nuclear Science · 2021 · 58 citations

Electrical Engineering, Engineering, High Voltage Engineering +15

Dose-rate sensitivity of modern nMOSFETs

S.C. Witczak, R.C. Lacoe, J.V. Osborn et al. · IEEE Transactions on Nuclear Science · 2005 · 55 citations

Device Modeling, Electrical Engineering, Semiconductor Device +12

Device-Orientation Effects on Multiple-Bit Upset in 65 nm SRAMs

Alan D. Tipton, Jonathan A. Pellish, John M. Hutson et al. · IEEE Transactions on Nuclear Science · 2008 · 53 citations

Impact of Heavy-Ion Range on Single-Event Effects in Silicon Carbide Power Junction Barrier Schottky Diodes

Arijit Sengupta, Dennis R. Ball, Arthur F. Witulski et al. · IEEE Transactions on Nuclear Science · 2023 · 34 citations

Junction Barrier Schottky, Electrical Engineering, Semiconductor Device +11