Arto Javanainen - Concepedia

Author

Arto Javanainen

Also Known As

A Javanainen, A. Javanainen, Arto Javanainen, Gilardoni, S, Gilardoni, S S, Javanainen, Arto, L. Giambastiani, Luca Giambastiani, M Rossi, S. Gilardoni

Publications

Citations

H-Index

Concepts

All Affiliations

University of Jyväskylä Vanderbilt University European Space Research and Technology Centre European Organization for Nuclear Research Centre National de la Recherche Scientifique

About

Arto Javanainen is an author at University of Jyväskylä specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	23	35	1.7K
2	Applied Physics	18	23	1.3K
3	Health Sciences	4	4	97
4	Education	2	2	62
5	Natural Sciences	2	2	56

Arto Javanainen

Publications

1.9K

Citations

H-Index

Page 1

	Year	Citations
SEU characterization of commercial and custom-designed SRAMs based on 90 nm technology and below Andrea Coronetti, Matteo Cecchetto, Jialei Wang, Non-volatile MemoryEngineeringVlsi DesignComputer ArchitectureMulti-channel Memory Architecture	2020	220
Single-Event Burnout Mechanisms in SiC Power MOSFETs Arthur F. Witulski, Dennis R. Ball, K.F. Galloway, IEEE Transactions on Nuclear Science Electrical EngineeringExperimental DataEngineeringSemiconductor DeviceHigh Voltage Engineering	2018	175
Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes Dennis R. Ball, John M. Hutson, Arto Javanainen, IEEE Transactions on Nuclear Science Electrical EngineeringEngineeringPower DeviceNanoelectronicsBias Temperature Instability	2019	129
Single-Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices Arthur F. Witulski, Robert Arslanbekov, Ashok Raman, IEEE Transactions on Nuclear Science Electrical EngineeringEngineeringPhysicsPower DeviceNanoelectronics	2017	102
Heavy Ion Induced Degradation in SiC Schottky Diodes: Bias and Energy Deposition Dependence Arto Javanainen, K.F. Galloway, Christopher Nicklaw, IEEE Transactions on Nuclear Science Electrical EngineeringSic Schottky DiodesEngineeringNanoelectronicsStress-induced Leakage Current	2016	93
Heavy-Ion Microbeam Studies of Single-Event Leakage Current Mechanism in SiC VD-MOSFETs C. Martinella, Thomas Ziemann, Roger Stark, IEEE Transactions on Nuclear Science Electrical EngineeringPower MosfetEngineeringHeavy-ion MicrobeamsPhysics	2020	85
Current Transport Mechanism for Heavy-Ion Degraded SiC MOSFETs C. Martinella, Roger Stark, Thomas Ziemann, IEEE Transactions on Nuclear Science Electrical EngineeringEngineeringHigh SensitivityPower DeviceNanoelectronics	2019	67
Heavy-ion induced single event effects and latent damages in SiC power MOSFETs C. Martinella, Philipp Natzke, Rubén García Alía, Microelectronics Reliability	2021	65
Estimating Terrestrial Neutron-Induced SEB Cross Sections and FIT Rates for High-Voltage SiC Power MOSFETs Dennis R. Ball, Brian D. Sierawski, K.F. Galloway, IEEE Transactions on Nuclear Science Electrical EngineeringEngineeringCross SectionsPower DeviceBias Temperature Instability	2018	63
Heavy Ion Induced Degradation in SiC Schottky Diodes: Incident Angle and Energy Deposition Dependence Arto Javanainen, Marek Turowski, K.F. Galloway, IEEE Transactions on Nuclear Science Electrical EngineeringSic Schottky DiodesEngineeringNanoelectronicsBias Temperature Instability	2017	50

Page 1