Christopher Nicklaw

Unified model of hole trapping, 1/f noise, and thermally stimulated current in MOS devices

Daniel M. Fleetwood, Hao Xiong, Zhong-Yi Lu et al. · IEEE Transactions on Nuclear Science · 2002 · 163 citations

Device Modeling, Electrical Engineering, Mos Devices +14

The structure, properties, and dynamics of oxygen vacancies in amorphous SiO/sub 2/

Christopher Nicklaw, Zhong-Yi Lu, Daniel M. Fleetwood et al. · IEEE Transactions on Nuclear Science · 2002 · 138 citations

Oxygen Vacancies, Engineering, Solid-state Chemistry +21

Heavy Ion Induced Degradation in SiC Schottky Diodes: Bias and Energy Deposition Dependence

Arto Javanainen, K.F. Galloway, Christopher Nicklaw et al. · IEEE Transactions on Nuclear Science · 2016 · 93 citations · Full text

Electrical Engineering, Sic Schottky Diodes, Engineering +14

The E′ center and oxygen vacancies in SiO2

Sokrates T. Pantelides, Zhong-Yi Lu, Christopher Nicklaw et al. · Journal of Non-Crystalline Solids · 2007 · 66 citations

Engineering, Oxide Electronics, Surface Science +5

Heavy Ion Induced Degradation in SiC Schottky Diodes: Incident Angle and Energy Deposition Dependence

Arto Javanainen, Marek Turowski, K.F. Galloway et al. · IEEE Transactions on Nuclear Science · 2017 · 50 citations · Full text

Electrical Engineering, Sic Schottky Diodes, Engineering +13