Al Burk

Ultra high voltage (>12 kV), high performance 4H-SiC IGBTs

Sei‐Hyung Ryu, Craig Capell, Charlotte Jonas et al. · 2012 · 71 citations

Engineering, Electrical Engineering, Microelectronics +16

New generation 6.5 kV SiC power MOSFET

Shadi Sabri, Edward Van Brunt, Adam Barkley et al. · 2017 · 69 citations

Engineering, Electrical Engineering, Materials Science +16

High performance, ultra high voltage 4H-SiC IGBTs

Sei‐Hyung Ryu, Craig Capell, Lin Cheng et al. · 2012 · 49 citations

Engineering, Electrical Engineering, Materials Science +15

4H–SiC BJTs with current gain of 110

Qingchun Zhang, Anant Agarwal, Al Burk et al. · Solid-State Electronics · 2008 · 38 citations

Engineering, Electrical Engineering, Materials Science +11

Physical phenomena affecting performance and reliability of 4H–SiC bipolar junction transistors

Peter G. Muzykov, Robert M. Kennedy, Qingchun Zhang et al. · Microelectronics Reliability · 2008 · 35 citations

Engineering, Electrical Engineering, Materials Science +14