4H–SiC BJTs with current gain of 110

1800 V NPN bipolar junction transistors in 4H-SiC

Sei‐Hyung Ryu, Anant Agarwal, Ranbir Singh et al. · IEEE Electron Device Letters · 2001 · 161 citations

Engineering, Electrical Engineering, Materials Science +17

1000-V, 30-A 4H-SiC BJTs with high current gain

Sumi Krishnaswami, Anant Agarwal, Sei‐Hyung Ryu et al. · IEEE Electron Device Letters · 2005 · 84 citations

Engineering, Electrical Engineering, Materials Science +15

High current gain 4H-SiC npn bipolar junction transistors

Chih‐Fang Huang, James A. Cooper · IEEE Electron Device Letters · 2003 · 56 citations

Engineering, Electrical Engineering, Materials Science +12

Geometrical effects in high current gain 1100-V 4H-SiC BJTs

Martin Domeij, H.-S. Lee, Erik Danielsson et al. · IEEE Electron Device Letters · 2005 · 56 citations

Engineering, Electrical Engineering, Materials Science +17

A high current gain 4H-SiC NPN power bipolar junction transistor

Jianhui Zhang, Yanbin Luo, P. Alexandrov et al. · IEEE Electron Device Letters · 2003 · 35 citations

Engineering, Electrical Engineering, Materials Science +13