A. Budrevich

Comparison of Junctionless and Conventional Trigate Transistors With $L_{g}$ Down to 26 nm

R. Rios, A. Cappellani, M Armstrong et al. · IEEE Electron Device Letters · 2011 · 335 citations

Engineering, Electrical Engineering, Electronic Materials +10

Dopant, composition and carrier profiling for 3D structures

Wilfried Vandervorst, Claudia Fleischmann, Janusz Bogdanowicz et al. · Materials Science in Semiconductor Processing · 2016 · 46 citations

Natural Sciences, Materials Engineering, Materials Science +5

SIMS quantitative depth profiling of matrix elements in semiconductor layers

G. M. Gur’yanov, Todd P. St. Clair, R. Bhat et al. · Applied Surface Science · 2006 · 15 citations

Engineering, Materials Engineering, Materials Science +12

Kinetics of Shallow Junction Activation: Physical Mechanisms

Harold Kennel, M.D. Giles, Milan Diebel et al. · 2006 · 15 citations

Engineering, Electrical Engineering, Materials Science +15

Metrology aspects of SIMS depth profiling for advanced ULSI processes

A. Budrevich, Jerry Hunter · 1998 · 10 citations

Engineering, Electrical Engineering, Materials Science +15