Harold Kennel

High mobility strained germanium quantum well field effect transistor as the p-channel device option for low power (Vcc = 0.5 V) III–V CMOS architecture

R. Pillarisetty, B. Chu-Kung, S. Corcoran et al. · 2010 · 89 citations

Engineering, Applied Algebra, Semiconductor Device +16

Film stress-related vacancy supersaturation in silicon under low-pressure chemical vapor deposited silicon nitride films

S. T. Ahn, Harold Kennel, J. D. Plummer et al. · Journal of Applied Physics · 1988 · 57 citations

Materials Science, Semiconductors, Antimony Diffusion +13

Technology options for 22nm and beyond

Kelin J. Kuhn, Mark Y. Liu, Harold Kennel · 2010 · 39 citations

Engineering, Vlsi Design, Computer Architecture +16

Vacancy supersaturation in Si under SiO2 caused by SiO formation during annealing in Ar

S. T. Ahn, Harold Kennel, William A. Tiller et al. · Journal of Applied Physics · 1989 · 24 citations

Materials Engineering, Materials Science, Reaction Si+sio2→2sio +14

3-D analysis of semiconductor dopant distributions in a patterned structure using LEAP

J.S. Moore, K. S. Jones, Harold Kennel et al. · Ultramicroscopy · 2007 · 18 citations

Device Modeling, Geometric Modeling, Electrical Engineering +10