Chun-Chang Lu

An Ultralow EOT Ge MOS Device With Tetragonal HfO<sub>2</sub> and High Quality Hf<sub><italic>x</italic></sub>Ge<sub><italic>y</italic></sub>O Interfacial Layer

Chung-Hao Fu, Kuei‐Shu Chang‐Liao, Li-Jung Liu et al. · IEEE Transactions on Electron Devices · 2014 · 28 citations

Engineering, Electrical Engineering, Materials Science +17

Enhanced Hole Mobility and Low $Tinv$ for pMOSFET by a Novel Epitaxial Si/Ge Superlattice Channel

Chung-Hao Fu, Kuei‐Shu Chang‐Liao, Li-Jung Liu et al. · IEEE Electron Device Letters · 2012 · 18 citations

Engineering, Electrical Engineering, Materials Science +15

Improved electrical characteristics high-k gated MOS devices with in-situ remote plasma treatment in atomic layer deposition

Chen-Chien Li, Kuei‐Shu Chang‐Liao, Chung-Hao Fu et al. · Microelectronic Engineering · 2013 · 16 citations

Engineering, Materials Science, Physics +16

7.7 A 2.16pJ/b 112Gb/s PAM-4 Transceiver with Time-Interleaved 2b/3b ADCs and Unbalanced Baud-Rate CDR for XSR Applications in 28nm CMOS

Yen-Po Lin, Pen-Jui Peng, Chun-Chang Lu et al. · 2024 · 16 citations

Engineering, Communication, Electrical Engineering +16

Experimental evidence of suppression on oxygen vacancy formation in Hf based high-κ gate dielectrics with La incorporation

Chun-Chang Lu, Kuei‐Shu Chang‐Liao, Yu-Fen Cheng et al. · Microelectronic Engineering · 2009 · 11 citations

Natural Sciences, Materials Engineering, Materials Science +16