Experimental evidence of suppression on oxygen vacancy formation in Hf based high-κ gate dielectrics with La incorporation

Effect of Al inclusion in HfO₂ on the physical and electrical properties of the dielectrics

Weihang Zhu, T. Tamagawa, M. Gibson et al. · IEEE Electron Device Letters · 2002 · 262 citations

Natural Sciences, Electrical Engineering, Materials Science +17

New ternary oxides of mercury with the pyrochlore structure

A.W. Sleight · Inorganic Chemistry · 1968 · 187 citations

Natural Sciences, Chemistry, Materials Science +10

Structural and electrical properties of HfLaOx films for an amorphous high-k gate insulator

Y. Yamamoto, Koji Kita, Kentaro Kyuno et al. · Applied Physics Letters · 2006 · 135 citations

Natural Sciences, Materials Engineering, Materials Science +17

Phase transformations in hafnium dioxide thin films grown by atomic layer deposition at high temperatures

Jaan Aarik, Aleks Aidla, Hugo Mändar et al. · Applied Surface Science · 2001 · 74 citations

Natural Sciences, Materials Engineering, Materials Science +17

Suppression of oxygen vacancy formation in Hf-based high-k dielectrics by lanthanum incorporation

Naoto Umezawa, Kenji Shiraishi, Seiichi Sugino et al. · Applied Physics Letters · 2007 · 72 citations · Full text

Natural Sciences, Materials Science, Physics +17