Ming Tao

Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate With 10¹⁰ High On/Off Current Ratio and Low Specific On-Resistance

Yue Li, Maojun Wang, Ruiyuan Yin et al. · IEEE Electron Device Letters · 2020 · 70 citations

Engineering, Electrical Engineering, Materials Science +17

A GaN HEMT Structure Allowing Self-Terminated, Plasma-Free Etching for High-Uniformity, High-Mobility Enhancement-Mode Devices

Shuxun Lin, Maojun Wang, Fei Sang et al. · IEEE Electron Device Letters · 2016 · 69 citations

Engineering, Electrical Engineering, Materials Science +17

Characterization of 880 V Normally Off GaN MOSHEMT on Silicon Substrate Fabricated With a Plasma-Free, Self-Terminated Gate Recess Process

Ming Tao, Shaofei Liu, Bing Xie et al. · IEEE Transactions on Electron Devices · 2018 · 57 citations

Engineering, Electrical Engineering, Materials Science +13

Gate quality Si3N4 prepared by low temperature remote plasma enhanced chemical vapor deposition for III–V semiconductor-based metal–insulator–semiconductor devices

D. G. Park, Ming Tao, D. Li et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1996 · 49 citations

Engineering, Materials Engineering, Materials Science +17

Investigation of the threshold voltage drift in enhancement mode GaN MOSFET under negative gate bias stress

Fei Sang, Maojun Wang, Chuan Zhang et al. · Japanese Journal of Applied Physics · 2015 · 30 citations

Engineering, Electrical Engineering, Materials Science +17