Ruiyuan Yin

Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate With 10¹⁰ High On/Off Current Ratio and Low Specific On-Resistance

Yue Li, Maojun Wang, Ruiyuan Yin et al. · IEEE Electron Device Letters · 2020 · 69 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +14

Investigation of the Trap States and $V_{\text{TH}}$ Instability in LPCVD Si₃N₄/AlGaN/GaN MIS-HEMTs with an <i>In-Situ</i> Si₃N₄ Interfacial Layer

Hui Sun, Maojun Wang, Ruiyuan Yin et al. · IEEE Transactions on Electron Devices · 2019 · 40 citations

Wide-bandgap Semiconductor, Sub Xmlns, Engineering +21

Schottky-MOS Hybrid Anode AlGaN/GaN Lateral Field-Effect Rectifier With Low Onset Voltage and Improved Breakdown Voltage

Jingnan Gao, Maojun Wang, Ruiyuan Yin et al. · IEEE Electron Device Letters · 2017 · 35 citations

Low Onset Voltage, Wide-bandgap Semiconductor, Electrical Engineering +12

Incidence and influencing factors of post-intensive care cognitive impairment

Li Yao, Yaling Li, Ruiyuan Yin et al. · Intensive and Critical Care Nursing · 2021 · 30 citations

Cognitive Rehabilitation, Dementia, Brain Injury +1

Planar Dual Gate GaN HEMT Cascode Amplifier as a Voltage Readout pH Sensor With High and Tunable Sensitivities

Qi Cheng, Maojun Wang, Ming Tao et al. · IEEE Electron Device Letters · 2020 · 28 citations

Electrical Engineering, Tunable Sensitivities, Algan/gan High-electron-mobility Transistor +7