Concepedia

Fei Sang

FS

Statistics

Publications

3

Citations

109

H-Index

3

Active since

2015

Affiliations

Institute of Microelectronics(Current)

Peking University

Fei Sang is an author at Institute of Microelectronics specializing in semiconductor devices, electrical engineering, and iii-v semiconductors.

Publications per year

2015–2016

3

Publications

3

A GaN HEMT Structure Allowing Self-Terminated, Plasma-Free Etching for High-Uniformity, High-Mobility Enhancement-Mode Devices

Shuxun Lin, Maojun Wang, Fei Sang et al. · IEEE Electron Device Letters · 2016 · 69 citations

, , +17

Investigation of the threshold voltage drift in enhancement mode GaN MOSFET under negative gate bias stress

Fei Sang, Maojun Wang, Chuan Zhang et al. · Japanese Journal of Applied Physics · 2015 · 30 citations

, , +17

Time-dependent threshold voltage drift induced by interface traps in normally-off GaN MOSFET with different gate recess technique

Fei Sang, Maojun Wang, Ming Tao et al. · Applied Physics Express · 2016 · 10 citations

, , +17

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