R. Garcia

Fermi-Level Pinning at the Polysilicon/Metal Oxide Interface—Part I

C. C. Hobbs, L. R. C. Fonseca, A. A. Knizhnik et al. · IEEE Transactions on Electron Devices · 2004 · 224 citations

Engineering, Electrical Engineering, Materials Science +17

Fermi-Level Pinning at the Polysilicon/Metal–Oxide Interface—Part II

C. C. Hobbs, L. R. C. Fonseca, A. A. Knizhnik et al. · IEEE Transactions on Electron Devices · 2004 · 174 citations

Engineering, Electrical Engineering, Materials Science +17

Impact of Deposition and Annealing Temperature on Material and Electrical Characteristics of ALD HfO[sub 2]

Dina H. Triyoso, R. Liu, D. Roan et al. · Journal of The Electrochemical Society · 2004 · 167 citations

Natural Sciences, Materials Engineering, Materials Science +17

Fermi level pinning at the polySi/metal oxide interface

Chris Hobbs, L.M. Fonseca, V. Dhandapani et al. · 2004 · 111 citations

Engineering, Electrical Engineering, Materials Science +15

Physical and electrical properties of metal gate electrodes on HfO2 gate dielectrics

J. Schaeffer, S. Samavedam, D. C. Gilmer et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2002 · 100 citations

Engineering, Electrical Engineering, Materials Engineering +17